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MJ11030G

  • Available: 646

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MJ11030G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Polarity
    NPN
  • Lead Free
    Lead Free
  • Packaging
    Tray
  • Pin Count
    2
  • Published
    2008
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Surface Mount
    NO
  • Terminal Form
    PIN/PEG
  • Current Rating
    50A
  • Number of Pins
    2
  • Package / Case
    TO-204AE
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Transistor Type
    NPN - Darlington
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 weeks ago)
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Voltage - Rated DC
    90V
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Max Collector Current
    50A
  • Max Power Dissipation
    300W
  • Operating Temperature
    -55°C~200°C TJ
  • Number of Terminations
    2
  • Transistor Application
    AMPLIFIER
  • Reflow Temperature-Max (s)
    40
  • Emitter Base Voltage (VEBO)
    5V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    90V
  • Peak Reflow Temperature (Cel)
    260
  • Vce Saturation (Max) @ Ib, Ic
    3.5V @ 500mA, 50A
  • Collector Emitter Voltage (VCEO)
    90V
  • Current - Collector Cutoff (Max)
    2mA
  • Collector Emitter Breakdown Voltage
    90V
  • Collector Emitter Saturation Voltage
    2.5V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 25A 5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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