MJD18002D2T4G
- Manufacturer's Part No.:MJD18002D2T4G
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- Series:-
- Description:TRANS NPN 450V 2A DPAK
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- Available: 347
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MJD18002D2T4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- hFE Min14
- Frequency13MHz
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published2006
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating2A
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Transistor TypeNPN
- Base Part NumberMJD18002
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Power Dissipation50W
- Additional FeatureFREE WHEELING DIODE
- Number of Elements1
- Voltage - Rated DC450V
- Qualification StatusNot Qualified
- Transition Frequency13MHz
- Element ConfigurationSingle
- Max Breakdown Voltage450V
- Max Collector Current2A
- Max Power Dissipation50W
- Operating Temperature-65°C~150°C TJ
- Polarity/Channel TypeNPN
- Gain Bandwidth Product13MHz
- Number of Terminations2
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Emitter Base Voltage (VEBO)11V
- Transistor Element MaterialSILICON
- Collector Base Voltage (VCBO)1kV
- Peak Reflow Temperature (Cel)260
- Vce Saturation (Max) @ Ib, Ic750mV @ 200mA, 1A
- Collector Emitter Voltage (VCEO)450V
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage450V
- DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 1A 1V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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