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MJD210TF

  • Available: 2000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.65226US $0.65
10+US $0.43484US $4.35
30+US $0.32613US $9.78
100+US $0.26090US $26.09
500+US $0.23916US $119.58
1000+US $0.21742US $217.42

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MJD210TF
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • Polarity/Channel Type
    PNP
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Part Status
    Obsolete
  • Operating Temperature
    150°C TJ
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Base Part Number
    MJD210
  • Number of Terminations
    2
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2014
  • Pbfree Code
    yes
  • Current Rating
    -5A
  • Voltage - Rated DC
    -40V
  • Weight
    260.37mg
  • Max Power Dissipation
    1.4W
  • Transistor Type
    PNP
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Collector Emitter Voltage (VCEO)
    25V
  • Max Collector Current
    5A
  • Collector Emitter Breakdown Voltage
    25V
  • Transition Frequency
    65MHz
  • Max Breakdown Voltage
    25V
  • hFE Min
    45
  • Power Dissipation
    1.4W
  • Emitter Base Voltage (VEBO)
    -8V
  • Gain Bandwidth Product
    65MHz
  • Collector Base Voltage (VCBO)
    -40V
  • Frequency
    65MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    45 @ 2A 1V
  • Vce Saturation (Max) @ Ib, Ic
    1.8V @ 1A, 5A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2

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