MJE3055T
- Manufacturer's Part No.:MJE3055T
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- Description:TRANS NPN 60V 10A TO-220
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- In Stock: 10000
- Available: 101653
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.66000 | US $0.66 |
10+ | US $0.44000 | US $4.40 |
30+ | US $0.33000 | US $9.90 |
100+ | US $0.26400 | US $26.40 |
500+ | US $0.24200 | US $121.00 |
1000+ | US $0.22000 | US $220.00 |
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The MJE3055T is a high-power NPN transistor manufactured by STMicroelectronics, widely used in various electronic applications due to its robustness and reliability. This transistor is designed for high-voltage and high-current applications, making it suitable for use in power amplifiers, switching regulators, and motor control circuits.
Key Features:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package: The MJE3055T is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy heat dissipation. The package features three leads: the collector (C), base (B), and emitter (E).
- Voltage Rating: The transistor has a maximum collector-emitter voltage (Vce) of 60V, making it suitable for applications that require handling moderate to high voltages.
- Current Rating: It can handle a continuous collector current (Ic) of up to 15A, which is ideal for driving loads such as motors and high-power amplifiers.
- Power Dissipation: The MJE3055T can dissipate up to 115W of power, depending on the thermal management and heat sinking used in the application. This high power dissipation capability allows it to operate efficiently in demanding environments.
- Gain: The transistor has a current gain (hFE) ranging from 20 to 70 at a collector current of 4A, which provides sufficient amplification for various applications.
- Frequency Response: The MJE3055T has a transition frequency (fT) of approximately 2 MHz, making it suitable for low-frequency applications.
Electrical Characteristics:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 60V
- Emitter-Base Breakdown Voltage (V(BR)EBO): 5V
- Collector Current (Ic): 15A
- Power Dissipation (Ptot): 115W
- Thermal Resistance (junction to case): Typically around 3°C/W, which is crucial for thermal management in high-power applications.
Applications:
The MJE3055T is commonly used in:
- Power Amplifiers: It is often found in audio amplifiers and RF amplifiers due to its ability to handle significant power levels.
- Switching Regulators: The transistor is used in linear and switching power supplies for voltage regulation.
- Motor Drivers: It can drive DC motors in various applications, including robotics and industrial machinery.
- Linear Voltage Regulators: The MJE3055T can be used in conjunction with other components to create stable voltage outputs.
Conclusion:
The MJE3055T from STMicroelectronics is a versatile and reliable NPN transistor that excels in high-power applications. Its robust design, high current and voltage ratings, and efficient thermal performance make it a popular choice among engineers and hobbyists alike. Whether used in audio amplification, power regulation, or motor control, the MJE3055T continues to be a staple component in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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