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MMBF170LT1G

  • In Stock: 156000
  • Available: 1539447

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09394US $0.09
10+US $0.06263US $0.63
30+US $0.04697US $1.41
100+US $0.03758US $3.76
500+US $0.03445US $17.23
1000+US $0.03131US $31.31

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  • Description
  • Alternatives
  • Shopping Guide
Description

Product: MMBF170LT1G (mmbf170lt1g)

Category: Discrete Semiconductors

Description: This is a low-power, small-signal NPN bipolar junction transistor (BJT) in a SOT-23 (TO-236) package. It is ideal for general-purpose amplification and switching applications.

Key Features:

  • Low power consumption
  • Small size
  • Wide operating temperature range
  • High Vdss

Specifications:

  • Package type: SOT-23 (TO-236)
  • Operating temperature: -55°C to +150°C
  • Vdss: 40V
  • Ic: 100mA
  • hFE: 100 (min)
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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