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MMBF170

  • In Stock: 30000
  • Available: 1235747

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.17985US $0.18
10+US $0.11990US $1.20
30+US $0.08993US $2.70
100+US $0.07194US $7.19
500+US $0.06595US $32.97
1000+US $0.05995US $59.95

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Description

The MMBF170 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-power applications and is particularly well-suited for use in analog switching and amplification circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for compact circuit designs.
  3. Voltage Rating: The MMBF170 has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for a variety of applications where moderate voltage handling is required.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 200 mA, which is adequate for many low-power applications.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing it to be driven by low-voltage logic levels.
  6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to efficient operation and reduced power loss during switching.
  7. Capacitance: The input capacitance (C_iss) is relatively low, which allows for faster switching speeds and reduced drive requirements.

Applications:

The MMBF170 is commonly used in various applications, including:

  • Analog Switching: Ideal for switching analog signals in audio and video applications.
  • Signal Amplification: Suitable for low-noise amplification in RF (radio frequency) circuits.
  • Level Shifting: Can be used for level shifting in mixed-voltage systems.
  • General Purpose Switching: Useful in general-purpose switching applications where low power consumption is critical.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically ±20V.
  • Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is important for thermal management in circuit design.
  • Operating Temperature Range: The device can operate over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The MMBF170 from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for low-power applications requiring reliable switching and amplification. Its compact size, low on-resistance, and moderate voltage and current ratings make it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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