MMBF170
- Manufacturer's Part No.:MMBF170
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 60V 500MA SOT-23
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 30000
- Available: 1235747
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.17985 | US $0.18 |
10+ | US $0.11990 | US $1.20 |
30+ | US $0.08993 | US $2.70 |
100+ | US $0.07194 | US $7.19 |
500+ | US $0.06595 | US $32.97 |
1000+ | US $0.05995 | US $59.95 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
- Description
- Alternatives
- Shopping Guide
The MMBF170 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-power applications and is particularly well-suited for use in analog switching and amplification circuits.
Key Features:
- Type: N-channel MOSFET
- Package: Typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for compact circuit designs.
- Voltage Rating: The MMBF170 has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for a variety of applications where moderate voltage handling is required.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 200 mA, which is adequate for many low-power applications.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing it to be driven by low-voltage logic levels.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to efficient operation and reduced power loss during switching.
- Capacitance: The input capacitance (C_iss) is relatively low, which allows for faster switching speeds and reduced drive requirements.
Applications:
The MMBF170 is commonly used in various applications, including:
- Analog Switching: Ideal for switching analog signals in audio and video applications.
- Signal Amplification: Suitable for low-noise amplification in RF (radio frequency) circuits.
- Level Shifting: Can be used for level shifting in mixed-voltage systems.
- General Purpose Switching: Useful in general-purpose switching applications where low power consumption is critical.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically ±20V.
- Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is important for thermal management in circuit design.
- Operating Temperature Range: The device can operate over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
Conclusion:
The MMBF170 from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for low-power applications requiring reliable switching and amplification. Its compact size, low on-resistance, and moderate voltage and current ratings make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance