MMBF5484LT1G

The MMBF5484LT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for low-voltage, high-speed switching applications, making it suitable for a variety of electronic circuits, including amplifiers, switches, and digital logic applications.

Key Features:

1. Type: N-channel MOSFET
2. Package: The MMBF5484LT1G is typically housed in a small SOT-23 package, which is a surface-mount technology (SMT) package that allows for compact designs and efficient use of PCB space.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of approximately 200 mA, which is adequate for many low-power applications.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for operation with low gate drive voltages.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to efficient power handling and reduced heat generation during operation.
7. Switching Speed: The MMBF5484LT1G features fast switching capabilities, making it ideal for high-frequency applications.
8. Temperature Range: The device is rated for operation over a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications:

• Switching Regulators: Used in power management circuits to efficiently switch power on and off.
• Signal Switching: Ideal for applications requiring fast signal switching, such as in digital circuits.
• Amplifiers: Can be used in RF amplifiers and other analog applications where low noise and high gain are required.
• Consumer Electronics: Commonly found in devices like smartphones, tablets, and other portable electronics.

Electrical Characteristics:

• Input Capacitance (C_iss): The input capacitance is typically low, which helps in achieving faster switching times.
• Output Capacitance (C_oss): The output capacitance is also low, contributing to the overall efficiency of the device.
• Reverse Transfer Capacitance (C_rss): This parameter is kept minimal to enhance the device's performance in high-frequency applications.

Conclusion:

The MMBF5484LT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage, high-speed applications. Its compact SOT-23 package, combined with its favorable electrical characteristics, makes it a popular choice among engineers and designers looking for reliable performance in their electronic circuits.