MMBF5484LT1

The MMBF5484LT1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for low-voltage applications and is particularly well-suited for use in switching and amplification circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The MMBF5484LT1 is typically housed in a small SOT-23 package, which is a surface-mount technology (SMT) package that allows for efficient use of board space and is suitable for automated assembly processes.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of approximately 200 mA, which is adequate for many low-power applications.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for operation with low gate drive voltages.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to efficient power handling and reduced heat generation during operation.
7. Switching Speed: The MMBF5484LT1 features fast switching capabilities, making it ideal for high-speed applications such as RF amplifiers and digital circuits.

Applications:

• Switching Power Supplies: The MMBF5484LT1 can be used in power management circuits where efficient switching is crucial.
• Signal Amplification: Its low noise characteristics make it suitable for RF and audio applications.
• Level Shifting: The device can be used in level shifting applications where signals need to be converted between different voltage levels.
• General Purpose Switching: It is also applicable in various general-purpose switching applications in consumer electronics and industrial devices.

Electrical Characteristics:

• Input Capacitance (C_iss): The input capacitance is relatively low, which helps in achieving faster switching times.
• Output Capacitance (C_oss): The output capacitance is also low, contributing to the overall efficiency of the device.
• Thermal Resistance: The thermal resistance is designed to ensure that the device can operate reliably under various thermal conditions.

Conclusion:

The MMBF5484LT1 from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize performance in their electronic designs.