MMBT2222A-7-F

The MMBT2222A-7-F is a widely used NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is designed for general-purpose switching and amplification applications. Here’s a detailed description of its key features and specifications:

Package and Form Factor

• Package Type: The MMBT2222A-7-F is typically housed in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space. The SOT-23 package is compact, making it suitable for applications where space is a premium.

Electrical Characteristics

• Transistor Type: NPN
• Maximum Collector-Emitter Voltage (Vce): The MMBT2222A-7-F can handle a maximum Vce of 40V, making it suitable for a variety of applications that require moderate voltage levels.
• Maximum Collector Current (Ic): It can support a maximum collector current of 800mA, allowing it to drive loads effectively in switching applications.
• DC Current Gain (hFE): The transistor has a current gain (hFE) ranging from 100 to 300 at a collector current of 10mA, which indicates its efficiency in amplifying signals.

Thermal Characteristics

• Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, which provides a good thermal margin for operation in various environments.
• Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is typically around 250°C/W, which is important for understanding how the device will dissipate heat during operation.

Switching Characteristics

• Transition Frequency (fT): The MMBT2222A-7-F has a transition frequency of approximately 250MHz, making it suitable for high-frequency applications.
• Rise and Fall Times: The device exhibits fast switching times, which is beneficial for applications requiring quick on/off control.

Applications

The MMBT2222A-7-F is versatile and can be used in various applications, including:

• General-purpose amplification
• Signal switching
• Relay driving
• Motor control
• LED driving

Additional Features

• RoHS Compliant: The MMBT2222A-7-F is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.
• High Reliability: Diodes Incorporated is known for producing reliable components, and the MMBT2222A-7-F is no exception, making it a trusted choice for engineers and designers.

Conclusion

The MMBT2222A-7-F from Diodes Incorporated is a robust and versatile NPN transistor suitable for a wide range of electronic applications. Its compact size, high current handling capability, and good thermal performance make it an excellent choice for both hobbyist projects and professional designs.