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MMBT2222ALT1G

  • In Stock: 6754986
  • Available: 2658

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.03300US $0.03
10+US $0.02200US $0.22
30+US $0.01650US $0.50
100+US $0.01320US $1.32
500+US $0.01210US $6.05
1000+US $0.01100US $11.00

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Description

The MMBT2222ALT1G is a specific variant of the widely used NPN bipolar junction transistor (BJT) known as the 2N2222. Manufactured by Rochester Electronics, this component is designed for general-purpose switching and amplification applications.

Key Features:

  1. Type: NPN Bipolar Junction Transistor
  2. Package: The MMBT2222ALT1G typically comes in a surface-mount package, specifically the SOT-23 package, which is compact and suitable for high-density circuit designs.
  3. Pin Configuration: The SOT-23 package usually has three pins, which are designated as:
    • Collector (C): The terminal through which the output current flows.
    • Base (B): The terminal that controls the transistor's operation.
    • Emitter (E): The terminal through which the input current flows out.

Electrical Characteristics:

  • Maximum Collector-Emitter Voltage (Vce): Typically around 40V, allowing it to handle a wide range of applications.
  • Maximum Collector Current (Ic): Generally rated at 800mA, making it suitable for driving loads in various circuits.
  • DC Current Gain (hFE): The transistor exhibits a gain of approximately 100 to 300, depending on the specific operating conditions, which is beneficial for amplification purposes.
  • Transition Frequency (fT): The MMBT2222ALT1G has a transition frequency of around 250 MHz, indicating its capability for high-speed switching applications.

Applications:

The MMBT2222ALT1G is versatile and can be used in various applications, including:

  • Switching Circuits: Ideal for low to medium power switching applications in consumer electronics.
  • Amplification: Suitable for audio and RF amplification circuits.
  • Signal Processing: Commonly used in signal processing applications due to its fast switching capabilities.

Thermal Characteristics:

  • Junction Temperature (TJ): The maximum junction temperature is typically rated at 150°C, allowing for operation in a range of environments.
  • Thermal Resistance: The thermal resistance from junction to ambient is low, which helps in managing heat dissipation effectively.

Additional Information:

  • RoHS Compliance: The MMBT2222ALT1G is compliant with RoHS standards, ensuring it is free from hazardous substances, making it suitable for environmentally conscious designs.
  • Manufacturer: Rochester Electronics specializes in the production and distribution of semiconductors, and the MMBT2222ALT1G is part of their extensive catalog of electronic components.

In summary, the MMBT2222ALT1G from Rochester Electronics is a reliable and efficient NPN transistor that is well-suited for a variety of electronic applications, offering a balance of performance, size, and thermal management.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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