MMBT2222ALT1G
- Manufacturer's Part No.:MMBT2222ALT1G
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Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.03300 | US $0.03 |
10+ | US $0.02200 | US $0.22 |
30+ | US $0.01650 | US $0.50 |
100+ | US $0.01320 | US $1.32 |
500+ | US $0.01210 | US $6.05 |
1000+ | US $0.01100 | US $11.00 |
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The MMBT2222ALT1G is a specific variant of the widely used NPN bipolar junction transistor (BJT) known as the 2N2222. Manufactured by Rochester Electronics, this component is designed for general-purpose switching and amplification applications.
Key Features:
- Type: NPN Bipolar Junction Transistor
- Package: The MMBT2222ALT1G typically comes in a surface-mount package, specifically the SOT-23 package, which is compact and suitable for high-density circuit designs.
- Pin Configuration: The SOT-23 package usually has three pins, which are designated as:
- Collector (C): The terminal through which the output current flows.
- Base (B): The terminal that controls the transistor's operation.
- Emitter (E): The terminal through which the input current flows out.
Electrical Characteristics:
- Maximum Collector-Emitter Voltage (Vce): Typically around 40V, allowing it to handle a wide range of applications.
- Maximum Collector Current (Ic): Generally rated at 800mA, making it suitable for driving loads in various circuits.
- DC Current Gain (hFE): The transistor exhibits a gain of approximately 100 to 300, depending on the specific operating conditions, which is beneficial for amplification purposes.
- Transition Frequency (fT): The MMBT2222ALT1G has a transition frequency of around 250 MHz, indicating its capability for high-speed switching applications.
Applications:
The MMBT2222ALT1G is versatile and can be used in various applications, including:
- Switching Circuits: Ideal for low to medium power switching applications in consumer electronics.
- Amplification: Suitable for audio and RF amplification circuits.
- Signal Processing: Commonly used in signal processing applications due to its fast switching capabilities.
Thermal Characteristics:
- Junction Temperature (TJ): The maximum junction temperature is typically rated at 150°C, allowing for operation in a range of environments.
- Thermal Resistance: The thermal resistance from junction to ambient is low, which helps in managing heat dissipation effectively.
Additional Information:
- RoHS Compliance: The MMBT2222ALT1G is compliant with RoHS standards, ensuring it is free from hazardous substances, making it suitable for environmentally conscious designs.
- Manufacturer: Rochester Electronics specializes in the production and distribution of semiconductors, and the MMBT2222ALT1G is part of their extensive catalog of electronic components.
In summary, the MMBT2222ALT1G from Rochester Electronics is a reliable and efficient NPN transistor that is well-suited for a variety of electronic applications, offering a balance of performance, size, and thermal management.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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