MMBT3906LT1G

The MMBT3906LT1G is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for a variety of applications, including switching and amplification in low-power circuits. Here’s a detailed description of its key features and specifications:

Package and Form Factor

• Package Type: The MMBT3906LT1G is typically housed in a small SOT-23 package, which is a surface-mount technology (SMT) package. This compact form factor makes it suitable for space-constrained applications.
• Dimensions: The SOT-23 package generally measures approximately 2.9 mm x 1.3 mm x 1.1 mm, allowing for efficient use of PCB space.

Electrical Characteristics

• Type: PNP transistor, meaning it conducts when the base is pulled low relative to the emitter.
• Maximum Collector-Emitter Voltage (Vce): The MMBT3906LT1G can handle a maximum Vce of 40V, making it suitable for a wide range of applications.
• Maximum Collector Current (Ic): It can support a continuous collector current of up to 200 mA, which is adequate for many low-power applications.
• DC Current Gain (hFE): The transistor has a minimum DC current gain (hFE) of 100 at a collector current of 10 mA, which indicates its efficiency in amplifying signals.

Thermal Characteristics

• Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, allowing for operation in moderately high-temperature environments.
• Thermal Resistance: The thermal resistance from junction to ambient is typically around 250°C/W, which is important for managing heat dissipation in circuit designs.

Switching Characteristics

• Transition Frequency (fT): The MMBT3906LT1G has a transition frequency of approximately 250 MHz, making it suitable for high-frequency applications.
• Rise and Fall Times: The transistor exhibits fast switching characteristics, which are essential for applications requiring quick response times.

Applications

The MMBT3906LT1G is widely used in various applications, including:

• Signal amplification in audio and RF circuits.
• Switching applications in power management systems.
• General-purpose amplification in consumer electronics.
• Level shifting and interfacing in digital circuits.

Additional Features

• Lead-Free: The MMBT3906LT1G is compliant with RoHS standards, making it an environmentally friendly choice for modern electronic designs.
• Reliability: ON Semiconductor provides a high level of reliability and performance consistency, which is critical for industrial and consumer applications.

Conclusion

The MMBT3906LT1G from ON Semiconductor is a versatile and reliable PNP transistor suitable for a wide range of electronic applications. Its compact size, robust electrical characteristics, and thermal performance make it an excellent choice for designers looking to implement efficient and effective circuit solutions.