MMBT4401LT1G

The MMBT4401LT1G is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications. Here’s a detailed description of its key features and specifications:

Package and Form Factor

• Package Type: The MMBT4401LT1G is typically housed in a small SOT-23 package, which is a surface-mount device (SMD) that allows for compact circuit designs and efficient use of board space.
• Dimensions: The SOT-23 package has a compact footprint, making it suitable for applications where space is at a premium.

Electrical Characteristics

• Type: NPN transistor, which means it conducts when a positive voltage is applied to the base relative to the emitter.
• Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is rated at 40V, allowing it to handle a variety of applications without risk of breakdown.
• Collector Current (Ic): The maximum collector current is rated at 600mA, making it suitable for driving loads in various electronic circuits.
• DC Current Gain (hFE): The transistor has a minimum DC current gain (hFE) of 100 at a collector current of 10mA, which indicates its efficiency in amplifying current.

Thermal Characteristics

• Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, which provides a good thermal margin for operation in various environments.
• Thermal Resistance: The thermal resistance from junction to ambient is low, allowing for effective heat dissipation during operation.

Switching Characteristics

• Transition Frequency (fT): The transition frequency is typically around 250 MHz, indicating its capability for high-speed switching applications.
• Rise and Fall Times: The MMBT4401LT1G exhibits fast rise and fall times, making it suitable for high-frequency applications.

Applications

The MMBT4401LT1G is widely used in:

• Signal Amplification: It can be used in audio and RF amplification circuits.
• Switching Applications: Ideal for low to medium power switching applications in consumer electronics, automotive, and industrial devices.
• Level Shifting: It can be used in level shifting applications where signal levels need to be converted.

Additional Features

• RoHS Compliant: The MMBT4401LT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
• High Reliability: ON Semiconductor is known for producing reliable components, and the MMBT4401LT1G is no exception, with a robust design suitable for various applications.

Conclusion

The MMBT4401LT1G from ON Semiconductor is a versatile NPN transistor that combines compact size, high performance, and reliability, making it an excellent choice for a wide range of electronic applications. Its specifications make it suitable for both switching and amplification tasks, catering to the needs of modern electronic designs.