MMBT4403LT1G

The MMBT4403LT1G is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications. Here’s a detailed description of its key features and specifications:

Package and Form Factor

• Package Type: The MMBT4403LT1G is typically housed in a small SOT-23 package, which is a surface-mount technology (SMT) package. This compact form factor makes it suitable for applications where space is limited.
• Dimensions: The SOT-23 package generally measures approximately 2.9 mm x 1.3 mm x 1.1 mm, allowing for efficient use of PCB space.

Electrical Characteristics

• Transistor Type: NPN
• Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is rated at 40V, making it suitable for a variety of applications that require moderate voltage handling.
• Collector Current (Ic): The maximum continuous collector current is rated at 600 mA, allowing it to drive moderate loads.
• Gain (hFE): The DC current gain (hFE) ranges from 100 to 300 at a collector current of 10 mA, providing good amplification capabilities.
• Base-Emitter Voltage (Vbe): The typical base-emitter voltage is around 0.7V when the transistor is in the active region.

Thermal Characteristics

• Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, which allows for operation in a wide range of thermal environments.
• Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is typically around 250°C/W, which is important for thermal management in circuit design.

Applications

The MMBT4403LT1G is suitable for a variety of applications, including:

• Switching Circuits: It can be used in low to moderate power switching applications, such as driving relays or controlling motors.
• Amplification: It is effective in audio and RF amplification circuits due to its good gain characteristics.
• Signal Processing: The transistor can be utilized in signal processing applications where linear amplification is required.

Additional Features

• Low Noise: The MMBT4403LT1G is designed to operate with low noise levels, making it suitable for audio and sensitive signal applications.
• High Speed: It has a relatively fast switching speed, which is beneficial for high-frequency applications.

Conclusion

The MMBT4403LT1G from ON Semiconductor is a versatile NPN transistor that combines compact size, moderate voltage and current ratings, and good amplification characteristics, making it a popular choice for a wide range of electronic applications. Its SOT-23 package allows for easy integration into modern electronic designs, particularly in space-constrained environments.