MMBTA06
- Manufacturer's Part No.:MMBTA06
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:SOT-23 Transistors (NPN/PNP) RoHS
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 1516718
- Available: 2860
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.04834 | US $0.05 |
10+ | US $0.03223 | US $0.32 |
30+ | US $0.02417 | US $0.73 |
100+ | US $0.01934 | US $1.93 |
500+ | US $0.01773 | US $8.87 |
1000+ | US $0.01612 | US $16.12 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerHT(Shenzhen Jinyu Semicon)
- Manufacturer's Part No.MMBTA06
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Single
- Series
- Part StatusObsolete
- Transistor TypeNPN
- Current - Collector (Ic) (Max)500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA 1V
- Power - Max350mW
- Frequency - Transition100MHz
- Operating Temperature-55°C~150°C TJ
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Supplier Device PackageSOT-23-3
- Factory Lead Time
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
- Surface Mount
- Number of Pins3
- Transistor Element Material
- PackagingTape & Reel (TR)
- Published2000
- Pbfree Code
- Number of Terminations
- Terminal Finish
- Max Power Dissipation350mW
- Terminal Position
- Terminal Form
- Peak Reflow Temperature (Cel)
- Reach Compliance Code
- Reflow Temperature-Max (s)
- Pin Count
- Number of Elements1
- PolarityNPN
- Case Connection
- Transistor Application
- Halogen Free
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current500mA
- Collector Emitter Breakdown Voltage80V
- Lead FreeLead Free
- Subcategory
- Frequency100MHz
- Base Part NumberMMBTA06
- Element ConfigurationSingle
- Power Dissipation350mW
- Gain Bandwidth Product100MHz
- Polarity/Channel Type
- Transition Frequency
- Collector Emitter Saturation Voltage250mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)4V
- hFE Min100
- Radiation HardeningNo
- Voltage - Rated DC80V
- Current Rating500mA
- Qualification Status
- Max Breakdown Voltage80V
- MountSurface Mount
- Configuration
- JEDEC-95 Code
- Contact PlatingTin
- Weight30mg
- Height1.2mm
- Length6.35mm
- Width6.35mm
- TerminationSMD/SMT
- Collector Current-Max (IC)
- DC Current Gain-Min (hFE)
- Collector-Emitter Voltage-Max
- HTS Code
- Number of Terminals
- Max Operating Temperature150°C
- Turn Off Time-Max (toff)
- Turn On Time-Max (ton)
- Voltage
- Current
- Continuous Collector Current
- Power Rating
- Type
- Noise Figure
- Min Operating Temperature-55°C
- Additional Feature
- Reference Standard
- Max Frequency100MHz
- VCEsat-Max
- Fall Time-Max (tf)
- Max Junction Temperature (Tj)150°C
- Mfr
- Operating Temperature (Max)
- Highest Frequency Band
- Collector-Base Capacitance-Max
- Power Dissipation-Max (Abs)
- Isolation Voltage
- Saturation Current
- Number of Channels
- Hold Current
- Manufacturer Package Identifier
- Output Voltage
- Rise Time-Max
- Turn On Delay Time
- Turn-Off Delay Time
- Gate to Source Voltage (Vgs)
- Continuous Drain Current (ID)
- Drain to Source Breakdown Voltage
- Output Power
- Number of Bits
- Power Dissipation Ambient-Max
- Material
- Diameter
- Thickness
- Max Supply Voltage
- Output Current
- Propagation Delay
- Input Current
- Operating Temperature (Min)
- Breakdown Voltage
- Input Capacitance
- Drain to Source Voltage (Vdss)
- Threshold Voltage
- Drain to Source Resistance
- k Reflow Temperature-Max (s)
- Size
- Product Category
- Ambient Temperature Range High
- Power Dissipation-Max
- Max Output Current
- Trim/Adjustable Output
- Analog IC - Other Type
- Max Output Voltage
- Min Input Voltage
- Max Input Voltage
- Reference Type
- Min Output Voltage
- Family
- Voltage Rating
- Technology
- FET Type
- Rds On (Max) @ Id, Vgs
- Vgs(th) (Max) @ Id
- Input Capacitance (Ciss) (Max) @ Vds
- Current - Continuous Drain (Id) @ 25°C
- Gate Charge (Qg) (Max) @ Vgs
- Vgs (Max)
- FET Feature
- Input Type
- Reverse Recovery Time
- Test Condition
- Vce(on) (Max) @ Vge, Ic
- IGBT Type
- Gate Charge
- Current - Collector Pulsed (Icm)
- Td (on/off) @ 25°C
- Gate-Emitter Voltage-Max
- Gate-Emitter Thr Voltage-Max
- Switching Energy
- Peak Reflow Temperature-Max (s)
- T
- Operating Mode
- Drain Current-Max (Abs) (ID)
- Drain-source On Resistance-Max
- Pulsed Drain Current-Max (IDM)
- DS Breakdown Voltage-Min
- FET Technology
- Resistor - Base (R1)
- Resistor - Emitter Base (R2)
- Time
- Gain
- Noise Figure (dB Typ @ f)
- Input
- NTC Thermistor
- Input Capacitance (Cies) @ Vce
- Forward Current
- Max Repetitive Reverse Voltage (Vrrm)
- Number of Functions
- Supply Voltage
- Terminal Pitch
- Temperature Grade
- Seated Height-Max
- Telecom IC Type
- Slew Rate
- Amplifier Type
- Neg Supply Voltage-Nom (Vsup)
- Average Bias Current-Max (IIB)
- Supply Voltage Limit-Max
- -3db Bandwidth
- Neg Supply Voltage-Max (Vsup)
- Input Offset Voltage-Max
- Output Current-Min
- Power Supplies
- Supply Current-Max (Isup)
- Reverse Recovery Time (trr)
- Lens Style
Environmental & Export Classifications
- JESD-609 Code
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN Code
- RoHS StatusRoHS Compliant
- JESD-30 Code
- REACH SVHCNo SVHC
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