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MMDF1N05ER2G

  • Available: 14136

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MMDF1N05ER2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Width
    4mm
  • Height
    1.5mm
  • Length
    5mm
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Published
    2006
  • Rise Time
    30ns
  • Resistance
    300MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current Rating
    1A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    25 ns
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    MMDF1N05E
  • Lifecycle Status
    OBSOLETE (Last Updated: 1 day ago)
  • Power Dissipation
    2W
  • Threshold Voltage
    3V
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Turn On Delay Time
    20 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Voltage - Rated DC
    50V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    40 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    300m Ω @ 1.5A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    2A
  • Gate Charge (Qg) (Max) @ Vgs
    12.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    300 mJ
  • Continuous Drain Current (ID)
    2A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    10A
  • Drain to Source Breakdown Voltage
    50V
  • Input Capacitance (Ciss) (Max) @ Vds
    330pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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