MMDF2C03HDR2
- Manufacturer's Part No.:MMDF2C03HDR2
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- Series:-
- Description:MOSFET N/P-CH 30V 4.1A/3A 8SOIC
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- Available: 12071
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MMDF2C03HDR2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET TypeN and P-Channel
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count8
- Published2006
- Rise Time18ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating4.1A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)194 ns
- Terminal FinishTin/Lead (Sn/Pb)
- Base Part NumberMMDF2C03HD
- Power Dissipation2W
- Terminal PositionDUAL
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Turn-Off Delay Time81 ns
- Qualification StatusNot Qualified
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Reach Compliance Codenot_compliant
- Number of Terminations8
- Rds On (Max) @ Id, Vgs70m Ω @ 3A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)324 mJ
- Continuous Drain Current (ID)3A
- Peak Reflow Temperature (Cel)240
- Drain-source On Resistance-Max0.07Ohm
- Pulsed Drain Current-Max (IDM)21A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds630pF @ 24V
- Current - Continuous Drain (Id) @ 25°C4.1A 3A
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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