MMDF3N04HDR2G
- Manufacturer's Part No.:MMDF3N04HDR2G
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- Series:-
- Description:MOSFET 2N-CH 40V 3.4A 8-SOIC
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- Available: 10708
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MMDF3N04HDR2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Published2006
- Rise Time15ns
- FET FeatureLogic Level Gate
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)19 ns
- Terminal FinishTin (Sn)
- Base Part NumberMMDF3N04HD
- Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
- Power Dissipation2W
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Voltage - Rated DC30V
- Turn-Off Delay Time15 ns
- Qualification StatusNot Qualified
- Max Power Dissipation1.39W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs80m Ω @ 3.4A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)96 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.4A
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)3A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage40V
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 32V
- Current - Continuous Drain (Id) @ 25°C3.4A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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