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MMDL6050T1G

  • In Stock: 94236
  • Available: 1157443

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.37080US $0.37
10+US $0.24720US $2.47
30+US $0.18540US $5.56
100+US $0.14832US $14.83
500+US $0.13596US $67.98
1000+US $0.12360US $123.60

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Description

The MMDL6050T1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for various applications, including power management, switching, and signal amplification. Below is a detailed description of its key features and specifications:

Package and Physical Characteristics:

  • Package Type: The MMDL6050T1G is typically housed in a small, surface-mount package, specifically the SOT-23 package. This compact design allows for efficient use of space on printed circuit boards (PCBs).
  • Dimensions: The SOT-23 package generally measures approximately 3 mm x 1.6 mm x 1.1 mm, making it suitable for applications where space is a premium.

Electrical Characteristics:

  • Configuration: The device features two N-channel MOSFETs integrated into a single package, allowing for efficient circuit design and reduced board space.
  • Maximum Drain-Source Voltage (V_DS): The MMDL6050T1G can handle a maximum V_DS of 60V, making it suitable for a variety of high-voltage applications.
  • Continuous Drain Current (I_D): The maximum continuous drain current is rated at 6.5A at a case temperature of 25°C, which provides flexibility in handling different load conditions.
  • Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 1V to 2.5V, allowing for low-voltage operation and efficient switching.
  • R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.1 ohms at V_GS = 10V, which minimizes power loss during operation and enhances overall efficiency.

Performance Characteristics:

  • Switching Speed: The MMDL6050T1G exhibits fast switching capabilities, making it ideal for applications requiring rapid on/off control.
  • Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is low, which helps in managing heat dissipation during operation, thus enhancing reliability and performance.

Applications:

The MMDL6050T1G is suitable for a wide range of applications, including:

  • Power management circuits
  • Load switching
  • Motor control
  • DC-DC converters
  • Signal switching in communication devices

Additional Features:

  • RoHS Compliant: The MMDL6050T1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for modern electronic designs.
  • High Reliability: ON Semiconductor is known for producing high-quality components, and the MMDL6050T1G is no exception, offering robust performance in demanding environments.

In summary, the MMDL6050T1G from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of electronic applications, providing excellent performance in a compact package.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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