MMDL6050T1G
- Manufacturer's Part No.:MMDL6050T1G
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- Description:DIODE GEN PURP 70V 200MA SOD323
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- In Stock: 94236
- Available: 1157443
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.37080 | US $0.37 |
10+ | US $0.24720 | US $2.47 |
30+ | US $0.18540 | US $5.56 |
100+ | US $0.14832 | US $14.83 |
500+ | US $0.13596 | US $67.98 |
1000+ | US $0.12360 | US $123.60 |
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The MMDL6050T1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for various applications, including power management, switching, and signal amplification. Below is a detailed description of its key features and specifications:
Package and Physical Characteristics:
- Package Type: The MMDL6050T1G is typically housed in a small, surface-mount package, specifically the SOT-23 package. This compact design allows for efficient use of space on printed circuit boards (PCBs).
- Dimensions: The SOT-23 package generally measures approximately 3 mm x 1.6 mm x 1.1 mm, making it suitable for applications where space is a premium.
Electrical Characteristics:
- Configuration: The device features two N-channel MOSFETs integrated into a single package, allowing for efficient circuit design and reduced board space.
- Maximum Drain-Source Voltage (V_DS): The MMDL6050T1G can handle a maximum V_DS of 60V, making it suitable for a variety of high-voltage applications.
- Continuous Drain Current (I_D): The maximum continuous drain current is rated at 6.5A at a case temperature of 25°C, which provides flexibility in handling different load conditions.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage typically ranges from 1V to 2.5V, allowing for low-voltage operation and efficient switching.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.1 ohms at V_GS = 10V, which minimizes power loss during operation and enhances overall efficiency.
Performance Characteristics:
- Switching Speed: The MMDL6050T1G exhibits fast switching capabilities, making it ideal for applications requiring rapid on/off control.
- Thermal Resistance: The thermal resistance from junction to ambient (RθJA) is low, which helps in managing heat dissipation during operation, thus enhancing reliability and performance.
Applications:
The MMDL6050T1G is suitable for a wide range of applications, including:
- Power management circuits
- Load switching
- Motor control
- DC-DC converters
- Signal switching in communication devices
Additional Features:
- RoHS Compliant: The MMDL6050T1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice for modern electronic designs.
- High Reliability: ON Semiconductor is known for producing high-quality components, and the MMDL6050T1G is no exception, offering robust performance in demanding environments.
In summary, the MMDL6050T1G from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of electronic applications, providing excellent performance in a compact package.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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