MMDT5551-7
- Manufacturer's Part No.:MMDT5551-7
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS 2NPN 160V 0.2A SOT363
- Datasheet:
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- Available: 13319
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerDiodes Incorporated
- Manufacturer's Part No.MMDT5551-7
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.35mm
- Height1mm
- Length2.2mm
- Weight6.010099mg
- hFE Min80
- PolarityNPN
- Frequency300MHz
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count6
- Published2007
- Part StatusDiscontinued
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating200mA
- Number of Pins6
- Package / Case6-TSSOP, SC-88, SOT-363
- Terminal FinishTin/Lead (Sn85Pb15)
- Transistor Type2 NPN (Dual)
- Base Part NumberMMDT5551
- Power Dissipation200mW
- Number of Elements2
- Voltage - Rated DC160V
- Qualification StatusNot Qualified
- Transition Frequency100MHz
- Element ConfigurationDual
- Max Breakdown Voltage160V
- Max Collector Current200mA
- Max Power Dissipation200mW
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codenot_compliant
- Gain Bandwidth Product300MHz
- Number of Terminations6
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)10
- Emitter Base Voltage (VEBO)6V
- Transistor Element MaterialSILICON
- Continuous Collector Current200mA
- Collector Base Voltage (VCBO)180V
- Peak Reflow Temperature (Cel)235
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
- Collector Emitter Voltage (VCEO)160V
- Current - Collector Cutoff (Max)50nA ICBO
- Collector Emitter Breakdown Voltage160V
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
Environmental & Export Classifications
- HTSUS8541.21.0075
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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