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MMUN2114LT1G

  • In Stock: 1600
  • Available: 4311730

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.06087US $0.06
10+US $0.04058US $0.41
30+US $0.03044US $0.91
100+US $0.02435US $2.44
500+US $0.02232US $11.16
1000+US $0.02029US $20.29

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The MMUN2114LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This component is designed for various applications, including switching and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The MMUN2114LT1G is typically housed in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: It has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium-voltage applications.
  4. Current Rating: The device can handle a continuous drain current (I_D) of approximately 0.5A, which is adequate for many low to medium power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which helps in reducing power losses during operation.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 1V to 3V, allowing for efficient switching at lower voltages.
  7. Switching Speed: The MMUN2114LT1G features fast switching capabilities, making it suitable for high-speed applications.
  8. Thermal Characteristics: It has a thermal resistance that allows for effective heat dissipation, which is crucial for maintaining performance and reliability in various operating conditions.

Applications:

The MMUN2114LT1G is commonly used in:

  • Power Management: As a switch in power supply circuits, enabling efficient control of power delivery.
  • Signal Switching: In audio and RF applications, where it can be used to switch signals on and off.
  • Load Switching: For controlling loads in consumer electronics, automotive applications, and industrial equipment.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Power Dissipation (P_D): Typically around 300mW, depending on the thermal conditions.
  • Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Conclusion:

The MMUN2114LT1G from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a range of electronic applications. Its compact size, low on-resistance, and robust electrical characteristics make it a popular choice among engineers and designers looking for reliable switching solutions in their circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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