MMUN2213LT1G

The MMUN2213LT1G is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor, designed for low-power switching and amplification applications. This component is particularly suited for use in various electronic circuits, including those in consumer electronics, automotive applications, and industrial equipment.

Key Features:

1. Type: NPN Transistor

   • The MMUN2213LT1G is an NPN transistor, which means it has three layers of semiconductor material: an n-type layer (emitter), a p-type layer (base), and another n-type layer (collector). This configuration allows it to conduct current when a positive voltage is applied to the base relative to the emitter.

2. Package: SOT-23

   • The transistor comes in a compact SOT-23 package, which is a surface-mount device (SMD) that is widely used in modern electronic designs due to its small footprint and ease of integration into printed circuit boards (PCBs).

3. Electrical Characteristics:

   • Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter is typically around 45V, making it suitable for a variety of applications.
   • Collector Current (Ic): The maximum continuous collector current is approximately 600mA, allowing it to handle moderate power levels.
   • DC Current Gain (hFE): The transistor exhibits a high current gain, typically in the range of 100 to 300, which enhances its efficiency in amplification applications.

4. Switching Speed:

   • The MMUN2213LT1G is designed for fast switching applications, with a transition frequency (fT) that allows it to operate effectively in high-speed circuits.

5. Thermal Characteristics:

   • The device has a maximum junction temperature rating of 150°C, which provides a good thermal margin for operation in various environments.

6. Applications:

   • This transistor is commonly used in low-power amplifiers, signal switching, and driver circuits for relays and motors. Its versatility makes it suitable for applications in consumer electronics, automotive systems, and industrial automation.

7. RoHS Compliance:

   • The MMUN2213LT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials, making it environmentally friendly.

Summary:

The MMUN2213LT1G from ON Semiconductor is a versatile NPN transistor that combines compact size, efficient performance, and robust electrical characteristics, making it an excellent choice for a wide range of electronic applications. Its SOT-23 packaging allows for easy integration into modern circuit designs, while its specifications support both switching and amplification tasks effectively.