MMUN2214LT1G
- Manufacturer's Part No.:MMUN2214LT1G
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- Description:TRANS PREBIAS NPN 246MW SOT23-3
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- In Stock: 38504
- Available: 4098222
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.03611 | US $0.04 |
10+ | US $0.02407 | US $0.24 |
30+ | US $0.01805 | US $0.54 |
100+ | US $0.01444 | US $1.44 |
500+ | US $0.01324 | US $6.62 |
1000+ | US $0.01204 | US $12.04 |
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- Description
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The MMUN2214LT1G is a NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor, designed for low-power switching and amplification applications. This component is particularly well-suited for use in various electronic circuits, including those found in consumer electronics, automotive applications, and industrial equipment.
Key Features:
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Type: NPN Transistor
- The MMUN2214LT1G is an NPN transistor, which means it has three layers of semiconductor material: an n-type layer (emitter), a p-type layer (base), and another n-type layer (collector). This configuration allows it to control current flow effectively.
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Package: SOT-23
- The transistor comes in a compact SOT-23 package, which is a surface-mount device (SMD) that is widely used in modern electronics due to its small footprint and ease of integration into circuit boards.
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Voltage and Current Ratings:
- Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter is typically around 50V, making it suitable for a variety of applications.
- Collector Current (Ic): The maximum continuous collector current is approximately 600mA, allowing it to handle moderate power levels.
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Gain Characteristics:
- The transistor has a high current gain (hFE), typically ranging from 100 to 300, which means it can amplify weak signals effectively. This characteristic is crucial for applications requiring signal amplification.
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Switching Speed:
- The MMUN2214LT1G is designed for fast switching applications, with a transition frequency (fT) that allows it to operate efficiently in high-speed circuits.
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Thermal Characteristics:
- The device has a maximum junction temperature rating of 150°C, which provides a good thermal margin for operation in various environments.
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Applications:
- Common applications include signal amplification, switching circuits, and driver stages for relays and motors. It is also used in audio amplifiers, RF amplifiers, and as a general-purpose transistor in various electronic designs.
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RoHS Compliance:
- The MMUN2214LT1G is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials, making it environmentally friendly.
Conclusion:
The MMUN2214LT1G from ON Semiconductor is a versatile and reliable NPN transistor that offers excellent performance for a wide range of electronic applications. Its compact size, high gain, and robust electrical characteristics make it a popular choice among engineers and designers looking to implement efficient switching and amplification solutions in their projects.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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