MPSH10RLRAG
- Manufacturer's Part No.:MPSH10RLRAG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:RF TRANS NPN 25V 650MHZ TO92-3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 10303
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MPSH10RLRAG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - RF
- Series-
- ECCNEAR99
- hFE Min60
- HTS Code8541.21.00.75
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published2007
- Part StatusObsolete
- Pbfree Codeyes
- Power - Max350mW
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Surface MountNO
- Current Rating4mA
- Number of Pins3
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Transistor TypeNPN
- Base Part NumberMPSH10
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal PositionBOTTOM
- Number of Elements1
- Voltage - Rated DC25V
- Qualification StatusNot Qualified
- Transition Frequency650MHz
- Element ConfigurationSingle
- Max Power Dissipation350mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeNPN
- Gain Bandwidth Product650MHz
- Highest Frequency BandULTRA HIGH FREQUENCY B
- Number of Terminations3
- Transistor ApplicationAMPLIFIER
- Collector Current-Max (IC)0.1A
- Reflow Temperature-Max (s)40
- Emitter Base Voltage (VEBO)3V
- Transistor Element MaterialSILICON
- Collector Base Voltage (VCBO)30V
- Peak Reflow Temperature (Cel)260
- Collector-Base Capacitance-Max0.7pF
- Collector Emitter Voltage (VCEO)25V
- Collector Emitter Breakdown Voltage25V
- Collector Emitter Saturation Voltage500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA 10V
Environmental & Export Classifications
- HTSUS8541.21.0075
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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