MRA4007T3G
- Manufacturer's Part No.:MRA4007T3G
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- Description:DIODE GEN PURP 1KV 1A SMA
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- In Stock: 20000
- Available: 2195338
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.12240 | US $0.12 |
10+ | US $0.08160 | US $0.82 |
30+ | US $0.06120 | US $1.84 |
100+ | US $0.04896 | US $4.90 |
500+ | US $0.04488 | US $22.44 |
1000+ | US $0.04080 | US $40.80 |
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- Description
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The MRA4007T3G is a general-purpose silicon rectifier diode manufactured by ON Semiconductor. It is designed for a variety of applications, including power supply circuits, signal demodulation, and general rectification tasks. Here’s a detailed description of its key features and specifications:
Physical Characteristics:
- Package Type: The MRA4007T3G is typically housed in a DO-214AC (SMA) package, which is a surface-mount device (SMD) configuration. This package is compact and suitable for automated assembly processes.
- Dimensions: The DO-214AC package has a small footprint, making it ideal for space-constrained applications. The exact dimensions can vary slightly, but it generally measures around 3.0 mm in height and 5.0 mm in length.
Electrical Specifications:
- Maximum Reverse Voltage (VR): The MRA4007T3G has a maximum reverse voltage rating of 1000 volts (V), making it suitable for high-voltage applications.
- Forward Current (IF): It can handle a maximum forward current of 1 ampere (A), which is adequate for many standard rectification tasks.
- Forward Voltage Drop (VF): The typical forward voltage drop is around 0.9 volts (V) at a forward current of 1 A, which is relatively low, contributing to efficient operation.
- Reverse Recovery Time (trr): The diode features a reverse recovery time of approximately 100 nanoseconds (ns), which is beneficial for high-frequency applications.
Performance Characteristics:
- Temperature Range: The MRA4007T3G operates effectively over a wide temperature range, typically from -55°C to +150°C, allowing it to be used in various environmental conditions.
- Surge Current Rating: It has a surge current rating (IFSM) of 30 A, which indicates its ability to withstand brief overcurrent conditions without damage.
Applications:
The MRA4007T3G is suitable for a variety of applications, including:
- Power supply circuits for converting AC to DC.
- Signal rectification in communication devices.
- Protection circuits to prevent reverse polarity damage.
- General-purpose rectification in consumer electronics.
Additional Features:
- Low Leakage Current: The diode exhibits low reverse leakage current, which is advantageous for maintaining efficiency in power applications.
- Reliability: As a product from ON Semiconductor, the MRA4007T3G is designed to meet high reliability standards, making it suitable for both commercial and industrial applications.
Conclusion:
The MRA4007T3G from ON Semiconductor is a versatile and reliable silicon rectifier diode that offers high voltage and current handling capabilities, making it an excellent choice for a wide range of electronic applications. Its compact package, efficient performance, and robust specifications make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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