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MSD1328-RT1G

  • Available: 7135

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MSD1328-RT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Part Status
    Obsolete
  • Operating Temperature
    150°C TJ
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 5 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Published
    2009
  • Pbfree Code
    yes
  • Current Rating
    -500mA
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    200mW
  • Transistor Type
    NPN
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    500mA
  • Collector Emitter Breakdown Voltage
    20V
  • hFE Min
    200
  • Power Dissipation
    200mW
  • Collector Emitter Saturation Voltage
    400mV
  • Emitter Base Voltage (VEBO)
    12V
  • Collector Base Voltage (VCBO)
    25V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA 2V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 20mA, 500mA

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3

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