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MSD2714AT1G

  • Available: 393

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MSD2714AT1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • hFE Min
    90
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2006
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    225mW
  • Subcategory
    BIP RF Small Signal
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    4mA
  • Number of Pins
    3
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    NPN
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 day ago)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Voltage - Rated DC
    25V
  • Qualification Status
    Not Qualified
  • Transition Frequency
    650MHz
  • Element Configuration
    Single
  • Max Power Dissipation
    225mW
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    NPN
  • Gain Bandwidth Product
    650MHz
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Number of Terminations
    3
  • Reflow Temperature-Max (s)
    40
  • Emitter Base Voltage (VEBO)
    3V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    30V
  • Peak Reflow Temperature (Cel)
    260
  • Collector-Base Capacitance-Max
    0.7pF
  • Collector Emitter Voltage (VCEO)
    25V
  • Collector Emitter Breakdown Voltage
    25V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    90 @ 1mA 6V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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