MT29F2G08ABAEAWP:E

The MT29F2G08ABAEAWP:E is a NAND Flash memory device designed by Micron Technology. It offers high-density storage and reliable performance, making it suitable for a wide range of applications that require non-volatile memory.

Key Features:

• Memory Capacity: 2 Gb (256 MB), providing ample storage for data and code.
• NAND Architecture: Utilizes NAND Flash technology, known for its high density and cost-effective storage.
• Page Size: 2048 bytes plus 64 bytes for spare area, allowing efficient read/write operations.
• Block Size: 64 pages per block, facilitating organized data management.
• Interface: Supports an 8-bit interface for straightforward integration with various controllers.
• Operating Voltage: Operates at 3.3V, suitable for standard power supplies.
• High Endurance: Designed for high endurance with a large number of program/erase cycles.
• Error Correction: Supports error correction code (ECC) to ensure data integrity.
• Package: Available in a 48-pin TSOP package, making it easy to integrate into PCB designs.
• RoHS Compliant: Complies with environmental regulations for the Restriction of Hazardous Substances.

Applications:

• Embedded Systems: Used in embedded systems for storing firmware and application data.
• Consumer Electronics: Ideal for use in digital cameras, MP3 players, and other consumer electronic devices.
• Industrial Applications: Suitable for industrial control systems and automation equipment requiring reliable non-volatile memory.
• Networking Equipment: Applied in routers, switches, and other networking devices for firmware and configuration storage.
• Medical Devices: Used in medical equipment where reliable and high-density storage is crucial.
• Data Storage Solutions: Integrated into solid-state drives (SSDs) and other data storage solutions.