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MT3S113P(TE12L,F)

  • In Stock: 221089
  • Available: 1000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.26900US $1.27
10+US $0.84600US $8.46
30+US $0.63450US $19.04
100+US $0.50760US $50.76
500+US $0.46530US $232.65
1000+US $0.42300US $423.00

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    MT3S113P(TE12L,F)
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 30mA 5V
  • Noise Figure (dB Typ @ f)
    1.45dB @ 1GHz
  • Voltage - Collector Emitter Breakdown (Max)
    5.3V
  • Frequency - Transition
    7.7GHz
  • Power - Max
    1.6W
  • Power Dissipation-Max (Abs)
    1.6W

Environmental & Export Classifications

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