MT41K64M16TW-107IT:J
- Manufacturer's Part No.:MT41K64M16TW-107IT:J
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- Description:FBGA-96 Pre-ordered MCUs RoHS
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- In Stock: 25000
- Available: 1339
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.09468 | US $3.09 |
10+ | US $2.78521 | US $27.85 |
30+ | US $2.16628 | US $64.99 |
100+ | US $1.77944 | US $177.94 |
500+ | US $1.70207 | US $851.04 |
1000+ | US $1.54734 | US $1547.34 |
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The MT41K64M16TW-107IT:J is a DRAM (Dynamic Random Access Memory) component manufactured by Micron Technology. It is a part of the DDR3 (Double Data Rate 3) SDRAM family, which is widely used in various electronic devices, including computers, servers, and embedded systems. Here’s a detailed description of its features and specifications:
General Specifications:
- Type: DDR3 SDRAM
- Organization: 64 Meg x 16 bits
- Density: 1 Gigabit (1Gbit)
- Package Type: Typically available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package, which is compact and suitable for high-density applications.
Electrical Characteristics:
- Voltage Supply (VDD): Operates at a nominal voltage of 1.5V, which is standard for DDR3 memory, allowing for lower power consumption compared to previous generations.
- I/O Voltage: The I/O interface operates at 1.5V, ensuring compatibility with other DDR3 components.
- Data Rate: Supports data rates up to 1066 MT/s (megatransfers per second), which translates to a bandwidth of approximately 8.5 GB/s per device.
Timing Parameters:
- CAS Latency (CL): The device typically supports a CAS latency of 7, which indicates the number of clock cycles it takes to access a specific column of data in memory.
- Row Cycle Time (tRC): The minimum row cycle time is specified, ensuring efficient access to memory rows.
- Refresh Rates: The device includes self-refresh capabilities, which help maintain data integrity during low-power states.
Features:
- Burst Length: Supports burst lengths of 4 and 8, allowing for efficient data transfer and improved performance in applications requiring high throughput.
- On-Die Termination (ODT): Integrated ODT helps reduce signal reflections and improve signal integrity, which is crucial for high-speed data transfer.
- Temperature Range: The "IT" in the part number indicates that it is designed for industrial temperature ranges, typically from -40°C to +95°C, making it suitable for harsh environments.
Applications:
The MT41K64M16TW-107IT:J is ideal for a variety of applications, including:
- Consumer electronics (e.g., laptops, desktops)
- Networking equipment
- Industrial automation systems
- Automotive applications
- Telecommunications
Compliance and Standards:
- The device complies with JEDEC standards for DDR3 memory, ensuring compatibility with a wide range of motherboards and systems.
- It is also RoHS compliant, indicating that it is free from hazardous substances, making it environmentally friendly.
Summary:
The MT41K64M16TW-107IT:J from Micron Technology is a versatile and efficient DDR3 SDRAM component that offers a balance of performance, power efficiency, and reliability. Its industrial-grade specifications make it suitable for demanding applications, while its compact packaging allows for integration into space-constrained designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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