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MUN5133DW1T1

  • Available: 61545

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.10000US $0.10

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    MUN5133DW1T1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
  • Part Status
    Obsolete
  • Transistor Type
    2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max)
    100mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    4.7k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
  • Power - Max
    385mW
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
  • Factory Lead Time
  • Mount
  • Number of Pins
  • Packaging
    Tape & Reel (TR)
  • Published
  • Pbfree Code
    yes
  • Number of Terminations
    6
  • Terminal Finish
    TIN LEAD
  • Max Operating Temperature
  • Min Operating Temperature
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 10
  • HTS Code
  • Subcategory
  • Voltage - Rated DC
  • Max Power Dissipation
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Current Rating
  • Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
  • Element Configuration
  • Power Dissipation
  • Transistor Application
    SWITCHING
  • Collector Emitter Voltage (VCEO)
  • Max Collector Current
  • Collector Emitter Breakdown Voltage
  • Transition Frequency
  • Max Breakdown Voltage
  • hFE Min
  • DC Current Gain-Min (hFE)
  • Continuous Collector Current
  • VCEsat-Max
  • Radiation Hardening
  • Lead Free
  • Lifecycle Status
  • Surface Mount
    YES
  • Qualification Status
    COMMERCIAL
  • Halogen Free
  • Collector Emitter Saturation Voltage
  • Emitter Base Voltage (VEBO)
  • Height
  • Length
  • Width
  • Transistor Element Material
    SILICON
  • Reach Compliance Code
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Polarity/Channel Type
    PNP
  • Collector-Emitter Voltage-Max
  • Base Part Number
  • Max Output Current
  • Operating Supply Voltage
  • Contact Plating
  • Reference Standard
  • Direction
  • Min Breakdown Voltage
  • Operating Temperature (Max)
  • Terminal Position
  • Weight
  • Number of Channels
  • Collector Base Voltage (VCBO)
  • Turn Off Time-Max (toff)
  • Turn On Time-Max (ton)
  • Collector Current-Max (IC)
  • Power Dissipation-Max (Abs)
  • Mfr

Environmental & Export Classifications

  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
  • REACH SVHC
  • RoHS Status
    Non-RoHS Compliant
  • JESD-30 Code
    R-PDSO-G6

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