MUN5235DW1T1
- Manufacturer's Part No.:MUN5235DW1T1
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- Series:-
- Description:TRANS 2NPN PREBIAS 0.25W SOT363
- Datasheet:
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- Available: 13903
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.MUN5235DW1T1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- Time@Peak Reflow Temperature-Max (s)30
- Package / Case6-TSSOP, SC-88, SOT-363
- Part StatusObsolete
- MountSurface Mount
- PackagingTape & Reel (TR)
- SubcategoryBIP General Purpose Small Signal
- Base Part NumberMUN52**DW1T
- Number of Terminations6
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeContains Lead
- Published2005
- Current Rating100mA
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 21.36
- Voltage - Rated DC50V
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation250mW
- Transistor Type2 NPN - Pre-Biased (Dual)
- Resistor - Base (R1)2.2k Ω
- Resistor - Emitter Base (R2)47k Ω
- Current - Collector Cutoff (Max)500nA
- Mounting TypeSurface Mount
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- Collector Emitter Breakdown Voltage50V
- Continuous Collector Current100mA
- Power Dissipation187mW
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee0
- JESD-30 CodeR-PDSO-G6
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