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MURA120T3G
- Manufacturer's Part No.:MURA120T3G
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- Description:DIODE GEN PURP 200V 2A SMA
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- In Stock: 27568
- Available: 956740
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.36300 | US $0.36 |
10+ | US $0.24200 | US $2.42 |
30+ | US $0.18150 | US $5.45 |
100+ | US $0.14520 | US $14.52 |
500+ | US $0.13310 | US $66.55 |
1000+ | US $0.12100 | US $121.00 |
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- Description
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- Shopping Guide
The MURA120T3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-speed switching applications and is particularly well-suited for use in power supply circuits, rectification, and other electronic applications where low forward voltage drop and fast recovery times are critical.
Key Features:
- Type: Schottky Barrier Rectifier
- Configuration: Single diode
- Maximum Reverse Voltage (VR): The MURA120T3G can handle a maximum reverse voltage of 20 volts, making it suitable for low-voltage applications.
- Forward Current (IF): It has a maximum forward current rating of 1 ampere, allowing it to conduct significant current in various applications.
- Forward Voltage Drop (VF): The diode exhibits a low forward voltage drop, typically around 0.45 volts at 1 ampere, which enhances efficiency by minimizing power loss during operation.
- Reverse Recovery Time (trr): The MURA120T3G features a very fast reverse recovery time, which is a critical parameter for high-frequency applications, ensuring minimal delay when switching from conducting to non-conducting states.
- Package Type: The diode is available in a surface-mount package (SMD), specifically in the SOD-123 package, which is compact and suitable for space-constrained designs.
- Operating Temperature Range: The device can operate over a wide temperature range, typically from -55°C to +150°C, making it versatile for various environmental conditions.
Applications:
- Power Supply Circuits: Ideal for use in power converters and power management systems.
- Rectification: Commonly used in AC to DC conversion applications.
- Flyback Diodes: Suitable for use in inductive load applications, such as relay and motor control circuits.
- Voltage Clamping: Can be used for voltage clamping in protection circuits to prevent over-voltage conditions.
Electrical Characteristics:
- Capacitance: The diode has a low junction capacitance, which contributes to its fast switching capabilities.
- Leakage Current (IR): The reverse leakage current is low, typically in the microamp range, which is beneficial for battery-operated devices.
Conclusion:
The MURA120T3G from ON Semiconductor is a reliable and efficient Schottky diode that offers excellent performance in a variety of electronic applications. Its low forward voltage drop, fast switching speed, and compact package make it an ideal choice for modern electronic designs requiring efficient power management and rectification solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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