MURA160T3G

The MURA160T3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor. This component is designed for high-speed switching applications and is particularly well-suited for use in power supply circuits, rectification, and other electronic applications where low forward voltage drop and fast recovery times are critical.

Key Features:

1. Type: Schottky Barrier Rectifier
2. Voltage Rating: The MURA160T3G has a maximum reverse voltage (V_R) rating of 60 volts, making it suitable for a variety of low to moderate voltage applications.
3. Current Rating: It can handle a forward current (I_F) of up to 1 ampere, which allows it to be used in applications requiring moderate current handling.
4. Forward Voltage Drop: One of the standout features of the MURA160T3G is its low forward voltage drop, typically around 0.45 volts at 1 ampere. This characteristic helps improve the efficiency of power conversion circuits by minimizing power loss.
5. Reverse Recovery Time: The diode exhibits a very fast reverse recovery time, which is essential for high-frequency applications. This feature helps reduce switching losses and improves overall circuit performance.
6. Package Type: The MURA160T3G is available in a surface-mount package (SMD), specifically the DO-214AC (SMB) package. This compact form factor is ideal for modern electronic designs where space is at a premium.
7. Temperature Range: The diode operates effectively over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Applications:

• Power Supply Circuits: Used in AC-DC converters and switch-mode power supplies (SMPS) for efficient rectification.
• Battery Chargers: Ideal for use in battery management systems where low forward voltage drop is crucial for efficiency.
• Signal Demodulation: Can be employed in RF applications for signal detection and demodulation.
• Protection Circuits: Utilized in reverse polarity protection and clamping applications to safeguard sensitive components.

Electrical Characteristics:

• Maximum Reverse Voltage (V_R): 60V
• Maximum Forward Current (I_F): 1A
• Forward Voltage Drop (V_F): ~0.45V at I_F = 1A
• Reverse Recovery Time (t_rr): Very fast, typically in the nanoseconds range.

Conclusion:

The MURA160T3G from ON Semiconductor is a versatile and efficient Schottky diode that meets the demands of modern electronic applications. Its low forward voltage drop, fast switching capabilities, and robust thermal performance make it an excellent choice for engineers looking to enhance the efficiency and reliability of their designs.