MURS360T3G

The MURS360T3G is a Schottky barrier rectifier diode manufactured by ON Semiconductor, designed for high-efficiency applications. This component is particularly valued for its low forward voltage drop and fast switching capabilities, making it suitable for use in power management circuits, power supplies, and various other electronic applications.

Key Features:

1. Voltage Rating: The MURS360T3G has a maximum reverse voltage rating of 60 volts, which allows it to handle a variety of voltage levels in different applications.

2. Current Rating: It is rated for a forward current of up to 3 amps, making it capable of handling moderate power loads effectively.

3. Forward Voltage Drop: One of the standout features of this diode is its low forward voltage drop, typically around 0.45 volts at a forward current of 3 amps. This characteristic helps in reducing power loss and improving overall efficiency in circuits.

4. Reverse Recovery Time: The MURS360T3G exhibits a very fast reverse recovery time, which is crucial for high-frequency applications. This feature minimizes switching losses and enhances performance in applications such as switching power supplies and DC-DC converters.

5. Package Type: The diode is available in a surface-mount package (SMD), specifically the DO-214AC (SMB) package. This compact form factor is ideal for space-constrained designs and allows for easy integration into printed circuit boards (PCBs).

6. Thermal Characteristics: The MURS360T3G is designed to operate efficiently at elevated temperatures, with a maximum junction temperature of 150 degrees Celsius. This makes it suitable for use in environments where heat dissipation is a concern.

7. Applications: Common applications for the MURS360T3G include:

   • Power supplies
   • Battery chargers
   • Solar inverters
   • Motor drives
   • Flyback converters

Electrical Characteristics:

• Maximum Reverse Voltage (V_R): 60V
• Maximum Forward Current (I_F): 3A
• Forward Voltage Drop (V_F): ~0.45V at I_F = 3A
• Reverse Recovery Time (t_rr): Fast recovery, typically in the nanoseconds range.

Conclusion:

The MURS360T3G from ON Semiconductor is a reliable and efficient Schottky diode that offers excellent performance for a wide range of electronic applications. Its low forward voltage drop, fast switching speed, and robust thermal characteristics make it an ideal choice for designers looking to enhance the efficiency and reliability of their power management systems.