NDC7001C
- Manufacturer's Part No.:NDC7001C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 60V SSOT6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 147814
- Available: 386275
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.37950 | US $0.38 |
10+ | US $0.25300 | US $2.53 |
30+ | US $0.18975 | US $5.69 |
100+ | US $0.15180 | US $15.18 |
500+ | US $0.13915 | US $69.58 |
1000+ | US $0.12650 | US $126.50 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NDC7001C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height900μm
- Length3mm
- Weight36mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2002
- Rise Time10ns
- Resistance2Ohm
- FET FeatureLogic Level Gate
- Nominal Vgs2.1 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating350mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Contact PlatingTin
- Fall Time (Typ)10 ns
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Power Dissipation960mW
- Threshold Voltage2.1V
- Number of Channels2
- Number of Elements2
- Turn On Delay Time2.8 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Dual Supply Voltage60V
- Radiation HardeningNo
- Turn-Off Delay Time8 ns
- Element ConfigurationDual
- Max Power Dissipation700mW
- Min Breakdown Voltage60V
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs2 Ω @ 510mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.51A
- Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)510mA
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
- Current - Continuous Drain (Id) @ 25°C510mA 340mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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