NDS0605
- Manufacturer's Part No.:NDS0605
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- Description:MOSFET P-CH 60V 180MA SOT-23
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- In Stock: 10000
- Available: 1240500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.33000 | US $0.33 |
10+ | US $0.22000 | US $2.20 |
30+ | US $0.16500 | US $4.95 |
100+ | US $0.13200 | US $13.20 |
500+ | US $0.12100 | US $60.50 |
1000+ | US $0.11000 | US $110.00 |
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- Description
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The NDS0605 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The NDS0605 typically has a maximum drain-source voltage (V_DS) rating of around 60 volts, making it suitable for medium-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 30 amps, which allows it to manage significant power loads.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses and improved efficiency during operation.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is usually in the range of 1 to 3 volts, which indicates the minimum gate voltage required to turn the MOSFET on.
- Package Type: The NDS0605 is often available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is designed to ensure effective heat management, allowing the device to operate reliably under load.
Applications:
- Power Switching: The NDS0605 is commonly used in power supply circuits, motor drivers, and other applications where efficient switching is required.
- Load Switching: It can be utilized for switching loads in various electronic devices, including consumer electronics and industrial equipment.
- Amplification: In some configurations, it can be used for signal amplification in RF applications.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): Typically rated at ±20 volts, ensuring that the gate can handle a reasonable range of voltages without damage.
- Body Diode: The NDS0605 features an intrinsic body diode, which allows for current flow in the reverse direction, useful in applications like synchronous rectification.
Conclusion:
The NDS0605 from ON Semiconductor is a versatile and efficient N-channel MOSFET suitable for a wide range of applications. Its combination of high current handling, low on-resistance, and robust voltage ratings makes it an excellent choice for designers looking to optimize power efficiency in their electronic circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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