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NDS0610

  • In Stock: 10000
  • Available: 1346407

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.08874US $0.09
10+US $0.05916US $0.59
30+US $0.04437US $1.33
100+US $0.03550US $3.55
500+US $0.03254US $16.27
1000+US $0.02958US $29.58

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The NDS0610 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a TO-220 or similar package, which allows for efficient heat dissipation and easy mounting on PCBs.
  3. Voltage Rating: The NDS0610 has a maximum drain-source voltage (V_DS) rating of around 60V, making it suitable for medium-voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, depending on the thermal conditions and the specific package used.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The NDS0610 features fast switching capabilities, making it suitable for high-frequency applications.
  8. Thermal Resistance: The device has a low thermal resistance, which helps in managing heat during operation, thus improving reliability and performance.

Applications:

  • Power Supply Circuits: Used in DC-DC converters and power management systems.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Lighting Control: Can be used in LED drivers and lighting control systems.
  • Switching Regulators: Ideal for use in switching power supplies due to its efficiency and fast switching characteristics.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, allowing for safe operation within specified limits.
  • Body Diode: The NDS0610 includes an intrinsic body diode, which can conduct in the reverse direction, useful in applications like synchronous rectification.

Conclusion:

The NDS0610 from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize performance in their circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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