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NDS352AP

  • In Stock: 21000
  • Available: 678872

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.34650US $0.35
10+US $0.23100US $2.31
30+US $0.17325US $5.20
100+US $0.13860US $13.86
500+US $0.12705US $63.53
1000+US $0.11550US $115.50

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NDS352AP
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    10 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Cut Tape (CT)
  • Subcategory
    Other Transistors
  • Number of Terminations
    3
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    1997
  • Pbfree Code
    yes
  • Current Rating
    -900mA
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Voltage - Rated DC
    -30V
  • Contact Plating
    Tin
  • Height
    1.22mm
  • Width
    3.05mm
  • Weight
    30mg
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Power Dissipation
    500mW
  • Max Junction Temperature (Tj)
    150°C
  • Number of Channels
    1
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    500mW Ta
  • Turn On Delay Time
    8 ns
  • Turn-Off Delay Time
    35 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    0.9A
  • Drain to Source Voltage (Vdss)
    30V
  • Continuous Drain Current (ID)
    900mA
  • Resistance
    500mOhm
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Threshold Voltage
    -800mV
  • FET Type
    P-Channel
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    135pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    3nC @ 4.5V
  • Vgs (Max)
    ±20V
  • Rise Time
    16ns
  • Fall Time (Typ)
    16 ns
  • Nominal Vgs
    -1.7 V
  • Dual Supply Voltage
    -30V
  • Current - Continuous Drain (Id) @ 25°C
    900mA Ta
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Rds On (Max) @ Id, Vgs
    300m Ω @ 1A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

SHIPPING GUIDE

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