NDS8961
- Manufacturer's Part No.:NDS8961
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 30V 3.1A 8-SOIC
- Datasheet:
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- Available: 13179
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NDS8961
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- MountSurface Mount
- PackagingTape & Reel (TR)
- Lead FreeLead Free
- Current Rating3.1A
- Voltage - Rated DC30V
- Max Power Dissipation900mW
- Mounting TypeSurface Mount
- Power Dissipation2W
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)3.1A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- FET FeatureLogic Level Gate
- Rise Time15ns
- Fall Time (Typ)3 ns
- Rds On (Max) @ Id, Vgs100m Ω @ 3.1A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusRoHS Compliant
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