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NDT2955

  • In Stock: 140000
  • Available: 85

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.50796US $0.51
10+US $0.33864US $3.39
30+US $0.25398US $7.62
100+US $0.20318US $20.32
500+US $0.18625US $93.13
1000+US $0.16932US $169.32

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  • Description
  • Alternatives
  • Shopping Guide
Description

The NDT2955 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various switching applications. It features a drain-to-source voltage rating of 60V and a continuous drain current of 7A. With a low on-resistance of 55 milliohms (@ 10V, 3A), it offers good efficiency and power handling capabilities. Additionally, the NDT2955 comes in the SOT-223 package, a compact and industry-standard surface-mount package suitable for various designs.

Key Features:
P-channel MOSFET
Drain-to-source voltage (Vdss): 60V
Continuous drain current (Id): 7A
On-resistance (Ron): 55 mΩ (@ 10V, 3A)
Package: SOT-223
RoHS compliant

Applications:
Motor control: Suitable for high-side switching in brushed DC motors and low-side switching in brushless DC motors.
Power switching: Can be used in various power switching applications, such as converters, inverters, and battery management systems.
Load control: Useful for controlling loads like LEDs, relays, and solenoids.
General-purpose switching: Applicable to various switching applications requiring a P-channel MOSFET with 60V and 7A ratings.

Benefits:
High drain-to-source voltage rating: Enables use in wider range of applications compared to lower voltage MOSFETs.
Low on-resistance: Improves efficiency and reduces power losses.
Compact package: Saves space on the PCB and simplifies board design.
RoHS compliant: Meets environmental regulations.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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