NDT451AN
- Manufacturer's Part No.:NDT451AN
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- Description:MOSFET N-CH 30V 7.2A SOT-223-4
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- Quantity:Buy NowAdd to Cart
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- In Stock: 4000
- Available: 4000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.58895 | US $1.59 |
10+ | US $1.05930 | US $10.59 |
30+ | US $0.79447 | US $23.83 |
100+ | US $0.63558 | US $63.56 |
500+ | US $0.58261 | US $291.31 |
1000+ | US $0.52965 | US $529.65 |
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- Description
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- Shopping Guide
The NDT451AN is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
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Package Type: The NDT451AN is typically housed in a compact surface-mount package, such as the SO-8 or similar, which allows for efficient space utilization on printed circuit boards (PCBs).
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Voltage Rating: This MOSFET has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
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Current Rating: The device can handle a continuous drain current (I_D) of approximately 4.5A, which is beneficial for applications requiring moderate power levels.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive from standard logic levels, which is advantageous in digital circuits.
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Thermal Characteristics: The NDT451AN features good thermal performance, with a maximum junction temperature (T_J) rating that allows it to operate effectively in various thermal environments.
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Switching Speed: The device is designed for fast switching applications, making it suitable for high-frequency operations in power converters and other switching power supplies.
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Applications: Common applications include DC-DC converters, motor drivers, load switches, and other power management circuits where efficient switching is critical.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically around ±20V, ensuring compatibility with a wide range of control signals.
- Body Diode: The NDT451AN includes an intrinsic body diode, which provides a path for current when the MOSFET is off, useful in applications like synchronous rectification.
Reliability and Compliance:
The NDT451AN is designed to meet various industry standards for reliability and performance, making it suitable for use in consumer electronics, automotive applications, and industrial systems. It is also RoHS compliant, ensuring that it meets environmental regulations regarding hazardous substances.
Conclusion:
Overall, the NDT451AN from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of electronic applications, particularly where space, efficiency, and performance are critical. Its combination of low on-resistance, moderate voltage and current ratings, and fast switching capabilities make it a popular choice among engineers and designers in the field of power electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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