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NE85633-T1B-R24-A

  • Available: 13626

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    CEL (California Eastern Laboratories)
  • Manufacturer's Part No.
    NE85633-T1B-R24-A
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    11.5dB
  • Mount
    Surface Mount
  • Polarity
    NPN
  • Frequency
    7GHz
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • Power - Max
    200mW
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Number of Pins
    3
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Type
    NPN
  • Base Part Number
    NE85633
  • Power Dissipation
    200mW
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Element Configuration
    Single
  • Max Collector Current
    100mA
  • Max Power Dissipation
    200mW
  • Operating Temperature
    150°C TJ
  • Frequency - Transition
    7GHz
  • Supplier Device Package
    SOT-23
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Noise Figure (dB Typ @ f)
    1.1dB @ 1GHz
  • Emitter Base Voltage (VEBO)
    3V
  • Continuous Collector Current
    100mA
  • Collector Base Voltage (VCBO)
    20V
  • Current - Collector (Ic) (Max)
    100mA
  • Collector Emitter Voltage (VCEO)
    12V
  • Collector Emitter Breakdown Voltage
    12V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 20mA 10V
  • Voltage - Collector Emitter Breakdown (Max)
    12V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • RoHS Status
    RoHS Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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