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NE85639R-T1

  • Available: 13728

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    CEL (California Eastern Laboratories)
  • Manufacturer's Part No.
    NE85639R-T1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    13.5dB
  • Mount
    Surface Mount
  • Packaging
    Cut Tape (CT)
  • Part Status
    Obsolete
  • REACH Status
    REACH Affected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Package / Case
    SOT-143R
  • Case Connection
    COLLECTOR
  • Transistor Type
    NPN
  • Base Part Number
    NE85639
  • Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Transition Frequency
    9000MHz
  • Element Configuration
    Single
  • Max Breakdown Voltage
    12V
  • Max Collector Current
    100mA
  • Max Power Dissipation
    200mW
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN
  • Frequency - Transition
    9GHz
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Number of Terminations
    4
  • Transistor Application
    AMPLIFIER
  • Noise Figure (dB Typ @ f)
    1.5dB ~ 2.1dB @ 1GHz
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    100mA
  • Collector-Base Capacitance-Max
    0.9pF
  • Collector Emitter Breakdown Voltage
    12V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 20mA 10V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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