NGD8201NT4G
- Manufacturer's Part No.:NGD8201NT4G
- Manufacturer:
- Categories:
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- Series:-
- Description:IGBT 440V 20A 125W DPAK
- Datasheet:
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- Available: 9511
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.NGD8201NT4G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published2005
- Input TypeLogic
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time6500 ns
- Mounting TypeSurface Mount
- Rise Time-Max8000ns
- Terminal FormGULL WING
- Current Rating20A
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition300V, 9A, 1k Ω, 5V
- Case ConnectionCOLLECTOR
- Terminal FinishTin (Sn)
- Base Part NumberNGD8201N
- Power Dissipation125W
- Fall Time-Max (tf)14000ns
- Number of Elements1
- Voltage - Rated DC400V
- Radiation HardeningNo
- Td (on/off) @ 25°C-/5μs
- Element ConfigurationSingle
- Max Breakdown Voltage440V
- Max Collector Current20A
- Max Power Dissipation125W
- Operating Temperature-55°C~175°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic1.9V @ 4.5V, 20A
- Gate-Emitter Voltage-Max15V
- Turn Off Time-Nom (toff)18500 ns
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max2.1V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)440V
- Current - Collector Pulsed (Icm)50A
- Collector Emitter Breakdown Voltage440V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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