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NGD8201NT4

  • In Stock: 5000000
  • Available: 11401

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.80000US $1.80
10+US $1.20000US $12.00
30+US $0.90000US $27.00
100+US $0.72000US $72.00
500+US $0.66000US $330.00
1000+US $0.60000US $600.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NGD8201NT4
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Lead Free
    Contains Lead
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Published
    2009
  • Input Type
    Logic
  • Part Status
    Obsolete
  • Pbfree Code
    no
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    6500 ns
  • Configuration
    SINGLE WITH BUILT-IN DIODE AND RESISTOR
  • Mounting Type
    Surface Mount
  • Rise Time-Max
    14000ns
  • Terminal Form
    GULL WING
  • Current Rating
    20A
  • Number of Pins
    3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    300V, 9A, 1k Ω, 5V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin/Lead (Sn80Pb20)
  • Base Part Number
    NGD8201N
  • Power Dissipation
    125W
  • Terminal Position
    SINGLE
  • Fall Time-Max (tf)
    7000ns
  • Number of Elements
    1
  • Voltage - Rated DC
    400V
  • Td (on/off) @ 25°C
    -/5μs
  • Qualification Status
    Not Qualified
  • Max Collector Current
    20A
  • Max Power Dissipation
    125W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reach Compliance Code
    not_compliant
  • Number of Terminations
    2
  • Transistor Application
    AUTOMOTIVE IGNITION
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 4.5V, 20A
  • Gate-Emitter Voltage-Max
    15V
  • Turn Off Time-Nom (toff)
    18500 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    240
  • Collector Emitter Voltage (VCEO)
    1.9V
  • Current - Collector Pulsed (Icm)
    50A
  • Collector Emitter Breakdown Voltage
    440V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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