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NGTB30N120IHLWG

  • Available: 7055

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NGTB30N120IHLWG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    TO-247-3
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 4 days ago)
  • Number of Pins
    3
  • Packaging
    Tube
  • Subcategory
    Insulated Gate BIP Transistors
  • Surface Mount
    NO
  • Terminal Finish
    Tin (Sn)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pin Count
    3
  • Lead Free
    Lead Free
  • Published
    2002
  • Pbfree Code
    yes
  • Height
    21.08mm
  • Length
    16.26mm
  • Width
    5.3mm
  • Weight
    6.500007g
  • Max Power Dissipation
    260W
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Power - Max
    260W
  • Mounting Type
    Through Hole
  • Element Configuration
    Single
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    60A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Collector Emitter Saturation Voltage
    1.75V
  • Halogen Free
    Halogen Free
  • Input Type
    Standard
  • Test Condition
    600V, 30A, 10 Ω, 15V
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    420nC
  • Current - Collector Pulsed (Icm)
    320A
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Switching Energy
    1mJ (off)
  • Td (on/off) @ 25°C
    -/360ns
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 30A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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