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NGTB50N60SWG

  • In Stock: 19791
  • Available: 19791

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $8.19000US $8.19
10+US $7.37100US $73.71
30+US $5.73300US $171.99
100+US $4.70925US $470.93
500+US $4.50450US $2252.25
1000+US $4.09500US $4095.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NGTB50N60SWG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Published
    2014
  • Input Type
    Standard
  • Gate Charge
    135nC
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 50A, 10 Ω, 15V
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE, NOT REC (Last Updated: 1 day ago)
  • Switching Energy
    600μJ (off)
  • Factory Lead Time
    5 Weeks
  • Td (on/off) @ 25°C
    70ns/144ns
  • Element Configuration
    Single
  • Max Collector Current
    100A
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    376ns
  • Vce(on) (Max) @ Vge, Ic
    2.6V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    20V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector Emitter Voltage (VCEO)
    2.6V
  • Current - Collector Pulsed (Icm)
    200A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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