NGTB50N65S1WG

The NGTB50N65S1WG is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring high efficiency and fast switching capabilities, making it suitable for power management, motor control, and other high-voltage applications.

Key Features:

1. Voltage Rating: The NGTB50N65S1WG has a maximum drain-source voltage (V_DS) of 650 volts, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 50 amperes, which makes it suitable for high-current applications.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.15 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy drive with standard logic levels.

5. Package Type: The device is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks, facilitating effective heat dissipation.

6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in managing heat during operation, ensuring reliability and longevity of the device.

7. Switching Speed: The NGTB50N65S1WG features fast switching capabilities, making it ideal for applications that require rapid on/off control, such as in switch-mode power supplies (SMPS) and DC-DC converters.

8. Applications: This MOSFET is commonly used in various applications, including:

   • Power supplies
   • Motor drivers
   • Inverters
   • Lighting control
   • Battery management systems

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20 volts
• Maximum Pulsed Drain Current (I_D,pulse): 100 amperes
• Total Gate Charge (Q_g): Approximately 60 nC at V_GS = 10V, which indicates the amount of charge required to turn the MOSFET on.

Reliability and Safety:

The NGTB50N65S1WG is designed with robust construction to ensure reliability in demanding environments. It features built-in protection against over-voltage and over-current conditions, making it a safe choice for various applications.

Conclusion:

The NGTB50N65S1WG from ON Semiconductor is a versatile and efficient N-channel MOSFET that meets the needs of modern power electronics. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize their designs for performance and efficiency.