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NRVB460MFST3G

  • In Stock: 30000
  • Available: 7248

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $90.00000US $90.00
10+US $70.00000US $700.00
30+US $60.00000US $1800.00
100+US $55.00000US $5500.00
500+US $53.00000US $26500.00
1000+US $50.00000US $50000.00

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Description

The NRVB460MFST3G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. N-Channel Configuration: The NRVB460MFST3G is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel devices.

  2. Voltage Rating: The MOSFET has a maximum drain-source voltage (V_DS) rating of 60V, making it suitable for applications that require moderate voltage handling.

  3. Current Rating: It can handle a continuous drain current (I_D) of up to 40A, which allows it to be used in high-current applications without overheating.

  4. On-Resistance: The device features a low on-resistance (R_DS(on)), typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.

  5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 3V, allowing for easy drive with standard logic levels.

  6. Package Type: The NRVB460MFST3G is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.

  7. Fast Switching Speed: The device is designed for fast switching applications, making it suitable for use in high-frequency circuits.

  8. Thermal Characteristics: It has a thermal resistance junction-to-case (RθJC) that allows for efficient heat management, which is critical in high-power applications.

Applications:

The NRVB460MFST3G is commonly used in various applications, including:

  • Power Supplies: It can be used in switch-mode power supplies (SMPS) for efficient power conversion.
  • Motor Control: The MOSFET is suitable for driving motors in industrial and consumer applications.
  • DC-DC Converters: It is ideal for use in buck, boost, and other types of DC-DC converters.
  • Load Switching: The device can be used for switching loads in various electronic circuits.

Conclusion:

Overall, the NRVB460MFST3G from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a wide range of power management and switching applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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