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NSBC113EDXV6T1

  • Available: 12608

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    NSBC113EDXV6T1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Package / Case
    SOT-563, SOT-666
  • Part Status
    Obsolete
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    BIP General Purpose Small Signal
  • Base Part Number
    NSBC1*
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    unknown
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Lead Free
    Contains Lead
  • Published
    2005
  • Current Rating
    100mA
  • Additional Feature
    BUILT IN BIAS RESISTOR RATIO IS 1
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    500mW
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Resistor - Base (R1)
    1k Ω
  • Resistor - Emitter Base (R2)
    1k Ω
  • Current - Collector Cutoff (Max)
    500nA
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    3 @ 5mA 10V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 5mA, 10mA

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    Non-RoHS Compliant
  • JESD-609 Code
    e3
  • JESD-30 Code
    R-PDSO-F6

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